English
简体中文
LM139-MIL QUAD DIFFERENTIAL COMP
POWER MANAGEMENT IC I.MX7 PRE-
IC DRAM 128MBIT PAR 86TSOP II
GK NICU NRS PU V0 DSH
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | DRAM |
| 技术: | SDRAM |
| 内存大小: | 128Mb (4M x 32) |
| 内存接口: | Parallel |
| 时钟频率: | 166 MHz |
| 写周期时间 - 字，页: | - |
| 访问时间: | 5.4 ns |
| 电压 - 电源: | 3V ~ 3.6V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 86-TFSOP (0.400", 10.16mm Width) |
| 供应商设备包: | 86-TSOP II |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IS61VPS51236B-250B3LIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 18MBIT PARALLEL 165TFBGA |
|
70T3539MS133BCRenesas Electronics America |
IC SRAM 18MBIT PARALLEL 256CABGA |
|
DS2431P-A1+Maxim Integrated |
IC EEPROM 1KBIT 1-WIRE 6TSOC |
|
IS62WV20488EBLL-45BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 16MBIT PAR 48MINIBGA |
|
AS7C1026B-20TCNAlliance Memory, Inc. |
IC SRAM 1MBIT PARALLEL 44TSOP2 |
|
FEMC008GCG-T340Flexxon |
IC FLASH 64GBIT EMMC 153FBGA |
|
25LC020AT-H/SNRoving Networks / Microchip Technology |
IC EEPROM 2KBIT SPI 10MHZ 8SOIC |
|
NDS63PT9-16ITInsignis Technology Corporation |
IC DRAM 64MBIT PAR 86TSOP II |
|
IS45S32400F-7TLA2ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PAR 86TSOP II |
|
DS2502P-E64+Maxim Integrated |
IC EPROM 1KBIT 1-WIRE 6TSOC |
|
AT45DB021E-SHN-BAdesto Technologies |
IC FLASH 2MBIT SPI 70MHZ 8SOIC |
|
CY7C1386BV25-150BGCRochester Electronics |
CACHE SRAM, 512KX36, 3.8NS |
|
93C66BT-I/OTRoving Networks / Microchip Technology |
IC EEPROM 4KBIT SPI 2MHZ SOT23-6 |