类型 | 描述 |
---|---|
系列: | Automotive, AEC-Q100, GL-T |
包裹: | Tray |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NOR |
内存大小: | 1Gb (128M x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 60ns |
访问时间: | 110 ns |
电压 - 电源: | 1.65V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 64-LBGA |
供应商设备包: | 64-FBGA (13x11) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
CY7C1041BNL-15ZXCRochester Electronics |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
25LC020AT-I/STRoving Networks / Microchip Technology |
IC EEPROM 2KBIT SPI 10MHZ 8TSSOP |
|
S26KL128SDABHB030Cypress Semiconductor |
IC FLASH 128MBIT PARALLEL 24FBGA |
|
AT34C02-10TI-2.7Rochester Electronics |
IC EEPROM 2KBIT I2C 8TSSOP |
|
CY27C256A-70PCRochester Electronics |
OTP ROM, 32KX8, 70NS PDIP28 |
|
MB85RS64PNF-G-JNE1Fujitsu Electronics America, Inc. |
IC FRAM 64KBIT SPI 20MHZ 8SOP |
|
AS4C128M16D2A-25BCNAlliance Memory, Inc. |
IC DRAM 2GBIT PARALLEL 84FBGA |
|
70T3539MS133BC8Renesas Electronics America |
IC SRAM 18MBIT PARALLEL 256CABGA |
|
W29GL512SL9T TRWinbond Electronics Corporation |
IC FLASH 512MBIT PARALLEL 56TSOP |
|
MT58L64L36PT-7.5Rochester Electronics |
CACHE SRAM, 64KX36, 4NS PQFP100 |
|
AT25160B-SSHL-TRoving Networks / Microchip Technology |
IC EEPROM 16KBIT SPI 20MHZ 8SOIC |
|
MT25QU128ABA8E12-0AATMicron Technology |
IC FLASH 128MBIT SPI 24TPBGA |
|
IS49RL36160-125EBLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 576MBIT PAR 168FCBGA |