类型 | 描述 |
---|---|
系列: | HTMOS™ |
包裹: | Bulk |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM |
内存大小: | 256Kb (32K x 8) |
内存接口: | Parallel |
时钟频率: | 20 MHz |
写周期时间 - 字,页: | 50ns |
访问时间: | 50 ns |
电压 - 电源: | 4.5V ~ 5.5V |
工作温度: | -55°C ~ 225°C (TA) |
安装类型: | Through Hole |
包/箱: | 28-CDIP (0.600", 15.24mm) |
供应商设备包: | 28-CDIP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
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