类型 | 描述 |
---|---|
系列: | MXSMIO™ |
包裹: | Tray |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NOR |
内存大小: | 32Mb (4M x 8) |
内存接口: | SPI |
时钟频率: | 104 MHz |
写周期时间 - 字,页: | 300µs, 5ms |
访问时间: | - |
电压 - 电源: | 2.7V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 24-TBGA, CSPBGA |
供应商设备包: | 24-CSPBGA (6x8) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MT25QL128ABA8E12-0AAT TRMicron Technology |
IC FLASH 128MBIT SPI 24TPBGA |
|
70V07L25PFG8Renesas Electronics America |
IC SRAM 256KBIT PARALLEL 80TQFP |
|
IS49RL36160-125BLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 576MBIT PAR 168FCBGA |
|
SST25VF040B-50-4I-S2AF-TRoving Networks / Microchip Technology |
IC FLASH 4MBIT SPI 50MHZ 8SOIC |
|
MR256A08BCMA35Everspin Technologies, Inc. |
IC RAM 256KBIT PARALLEL 48FBGA |
|
MT58L256L18F1T-10Rochester Electronics |
CACHE SRAM 256KX18 10NS PQFP100 |
|
MT29F8G16ADADAH4-IT:D TRMicron Technology |
IC FLASH 8GBIT PARALLEL 63VFBGA |
|
CY7C1470BV33-167BZITCypress Semiconductor |
IC SRAM 72MBIT PARALLEL 165FBGA |
|
IS43R32400E-5BLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PAR 144LFBGA |
|
CY27H010-45PCRochester Electronics |
OTP ROM, 128KX8, 45NS PDIP32 |
|
7008L15JGRenesas Electronics America |
IC SRAM 512KBIT PARALLEL 84PLCC |
|
S29GL064S80DHIV10Cypress Semiconductor |
IC FLASH 64MBIT PARALLEL 64FBGA |
|
W987D6HBGX7EWinbond Electronics Corporation |
IC DRAM 128MBIT PARALLEL 54VFBGA |