English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Active |
| 内存类型: | Non-Volatile |
| 内存格式: | NVSRAM |
| 技术: | NVSRAM (Non-Volatile SRAM) |
| 内存大小: | 256Kb (32K x 8) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 70ns |
| 访问时间: | 70 ns |
| 电压 - 电源: | 4.5V ~ 5.5V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Through Hole |
| 包/箱: | 28-DIP Module (0.600", 15.24mm) |
| 供应商设备包: | 28-PCDIP, CAPHAT® |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
CY7C024AV-25ACRochester Electronics |
IC SRAM 64KBIT PARALLEL 100TQFP |
|
S29GL128S90FHSS43Cypress Semiconductor |
IC FLASH 128MBIT PARALLEL 64FBGA |
|
NV93C86BMUW3VTBGSanyo Semiconductor/ON Semiconductor |
IC EEPROM 16KBIT SPI 2MHZ 8UDFN |
|
AS7C32096A-15TINAlliance Memory, Inc. |
IC SRAM 2MBIT PARALLEL 44TSOP2 |
|
CY27C512-90JIRochester Electronics |
OTP ROM, 64KX8, 90NS PQCC32 |
|
IS46TR16256BL-125KBLA1-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 4GBIT PARALLEL 96TWBGA |
|
GS8320Z18AGT-333IGSI Technology |
IC SRAM 36MBIT PARALLEL 100TQFP |
|
70V3599S166BCGRenesas Electronics America |
IC SRAM 4.5MBIT PAR 256CABGA |
|
CY7C1354BV25-166ACRochester Electronics |
ZBT SRAM, 256KX36, 3.5NS |
|
25LC640A-E/PRoving Networks / Microchip Technology |
IC EEPROM 64KBIT SPI 10MHZ 8DIP |
|
71V3557S85BG8Renesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 119PBGA |
|
71V2556SA100BG8Renesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 119PBGA |
|
71V424L12PHGRochester Electronics |
IC SRAM 4MBIT PARALLEL 44TSOP II |
