类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Asynchronous |
内存大小: | 64Kb (8K x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 55ns |
访问时间: | 55 ns |
电压 - 电源: | 2.7V ~ 5.5V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Through Hole |
包/箱: | 28-DIP (0.600", 15.24mm) |
供应商设备包: | 28-PDIP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
SST49LF008A-33-4C-WHE-TRoving Networks / Microchip Technology |
IC FLASH 8MBIT PARALLEL 32TSOP |
|
S29GL256N90TFAR10Cypress Semiconductor |
IC FLASH 256MBIT PARALLEL 56TSOP |
|
IS61LF102436B-7.5TQLIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 36MBIT PARALLEL 100LQFP |
|
25AA040A-I/SNRoving Networks / Microchip Technology |
IC EEPROM 4KBIT SPI 10MHZ 8SOIC |
|
IS46R16320E-5BLA1ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 60TFBGA |
|
NM24C17EM8Rochester Electronics |
IC EEPROM 16KBIT I2C 8SOIC |
|
GS81314LQ37GK-933IGSI Technology |
IC SRAM 144MBIT PARALLEL 260BGA |
|
71V547S80PFGI8Renesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
CAT25320YGI-26711Rochester Electronics |
IC EEPROM 32KBIT SPI 8TSSOP |
|
CY7C1414LV18-250BZXCRochester Electronics |
IC SRAM 36MBIT PARALLEL 165FBGA |
|
70261L15PFG8Renesas Electronics America |
IC SRAM 256KBIT PARALLEL 100TQFP |
|
S25FL032P0XMFV011Flip Electronics |
IC FLASH 32MBIT SPI/QUAD 8SOIC |
|
71V3557S80BGRenesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 119PBGA |