类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 256Kb (32K x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 10ms |
访问时间: | 90 ns |
电压 - 电源: | 4.5V ~ 5.5V |
工作温度: | -55°C ~ 125°C (TC) |
安装类型: | Through Hole |
包/箱: | 28-BCPGA |
供应商设备包: | 28-CPGA (13.97x16.51) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
25AA160C-I/STRoving Networks / Microchip Technology |
IC EEPROM 16KBIT SPI 8TSSOP |
|
24LC32AT-E/SMRoving Networks / Microchip Technology |
IC EEPROM 32KBIT I2C 8SOIJ |
|
IS25WQ020-JBLEISSI (Integrated Silicon Solution, Inc.) |
IC FLASH 2MBIT SPI 104MHZ 8SOP |
|
S70FS01GSAGBHM213Cypress Semiconductor |
IC FLASH 1GBIT SPI/QUAD 24BGA |
|
AT25XE081D-SSHN-TAdesto Technologies |
IC FLASH 8MBIT SPI/QUAD 8SOIC |
|
93LC46BT-E/MNYRoving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 2MHZ 8TDFN |
|
CY7C0852AV-133BBCRochester Electronics |
IC SRAM 4.5MBIT PARALLEL 172FBGA |
|
7164L25YGRenesas Electronics America |
IC SRAM 64KBIT PARALLEL 28SOJ |
|
UPD44645182AF5-E40-FQ1-ARochester Electronics |
QDR SRAM, 4MX18, 0.45NS |
|
AS4C8M16SA-6TANTRAlliance Memory, Inc. |
IC DRAM 128MBIT PAR 54TSOP II |
|
AS7C256A-15JCNAlliance Memory, Inc. |
IC SRAM 256KBIT PARALLEL 28SOJ |
|
DS1230AB-70+Maxim Integrated |
IC NVSRAM 256KBIT PAR 28EDIP |
|
CY14B101KA-SP45XICypress Semiconductor |
IC NVSRAM 1MBIT PARALLEL 48SSOP |