English
简体中文
4-CH SENSOR-TO-COMP. MODULE TC
IC TELECOM INTERFACE 28SOIC
IC FLASH 512MBIT PARALLEL 64LBGA
IC SWITCH QUAD SPST 16SOIC
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Automotive, AEC-Q100 |
| 包裹: | Tray |
| 零件状态: | Last Time Buy |
| 内存类型: | Non-Volatile |
| 内存格式: | FLASH |
| 技术: | FLASH - NOR |
| 内存大小: | 512Mb (64M x 8, 32M x 16) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 60ns |
| 访问时间: | 105 ns |
| 电压 - 电源: | 2.7V ~ 3.6V |
| 工作温度: | -40°C ~ 105°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 64-LBGA |
| 供应商设备包: | 64-LBGA (11x13) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
FT24C04A-KDR-BFremont Micro Devices |
IC EEPROM 4KBIT I2C 1MHZ 8DIP |
|
IS61C64AL-10TLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 64KBIT PARALLEL 28TSOP I |
|
R1EX25064ASA00A#S0Rochester Electronics |
IC EEPROM 64KBIT SPI 5MHZ 8SOP |
|
IS43LR16320B-6BL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 60TFBGA |
|
CY7C1061G18-15BV1XITCypress Semiconductor |
IC SRAM 16MBIT PARALLEL 48VFBGA |
|
CY7C1354BV25-166AXCRochester Electronics |
SRAM 9M-BIT 256K X 36 3.5NS |
|
CY7C1370KV25-167AXCCypress Semiconductor |
IC SRAM 18MBIT PARALLEL 100TQFP |
|
AS4C4M16D1A-5TCNAlliance Memory, Inc. |
IC DRAM 64MBIT PAR 66TSOP II |
|
25LC010AT-I/MCRoving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 10MHZ 8DFN |
|
AS7C34096A-12JINAlliance Memory, Inc. |
IC SRAM 4MBIT PARALLEL 36SOJ |
|
R1LP0408DSP-5SI#B1Renesas Electronics America |
IC SRAM 4MBIT PARALLEL 32SOP |
|
DS1230Y-120IND+Maxim Integrated |
IC NVSRAM 256KBIT PAR 28EDIP |
|
CY7C1514JV18-250BZXCRochester Electronics |
IC SRAM 72MBIT PARALLEL 165FBGA |