类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Synchronous, ZBT |
内存大小: | 18Mb (1M x 18) |
内存接口: | Parallel |
时钟频率: | 250 MHz |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | 2.3V ~ 2.7V, 3V ~ 3.6V |
工作温度: | -40°C ~ 100°C (TJ) |
安装类型: | Surface Mount |
包/箱: | 165-LBGA |
供应商设备包: | 165-FPBGA (15x13) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
CAV25512VE-GT3Rochester Electronics |
IC EEPROM 512KBIT SPI 8SOIC |
|
IS43TR82560D-125KBLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 2GBIT PARALLEL 78TWBGA |
|
24LC32A/SNRoving Networks / Microchip Technology |
IC EEPROM 32KBIT I2C 8SOIC |
|
SST49LF008A-33-4C-NHE-TRoving Networks / Microchip Technology |
IC FLASH 8MBIT PARALLEL 32PLCC |
|
AS4C64M8D1-5TCNTRAlliance Memory, Inc. |
IC DRAM 512MBIT PAR 66TSOP II |
|
MB85RS1MTPH-G-JNE1Fujitsu Electronics America, Inc. |
IC FRAM 1MBIT SPI 40MHZ 8DIP |
|
SST39VF802C-70-4I-B3KE-TRoving Networks / Microchip Technology |
IC FLASH 8MBIT PARALLEL 48TFBGA |
|
M95010-WMN6TPSTMicroelectronics |
IC EEPROM 1KBIT SPI 20MHZ 8SO |
|
MT58L128L36P1T-10Rochester Electronics |
IC SRAM 4MBIT PARALLEL 100TQFP |
|
IS46DR16320C-25DBLA1ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 84TWBGA |
|
W9412G6KH-5Winbond Electronics Corporation |
IC DRAM 128MBIT PAR 66TSOP II |
|
MT29F32G08ABAAAWP-Z:A TRMicron Technology |
IC FLSH 32GBIT PARALLEL 48TSOP I |
|
CAT25040VE-GT3Rochester Electronics |
IC EEPROM 4KBIT SPI 20MHZ 8SOIC |