English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | DRAM |
| 技术: | SDRAM - DDR |
| 内存大小: | 512Mb (64M x 8) |
| 内存接口: | Parallel |
| 时钟频率: | 200 MHz |
| 写周期时间 - 字，页: | 15ns |
| 访问时间: | 700 ps |
| 电压 - 电源: | 2.3V ~ 2.7V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 66-TSSOP (0.400", 10.16mm Width) |
| 供应商设备包: | 66-TSOP II |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
MB85RS1MTPH-G-JNE1Fujitsu Electronics America, Inc. |
IC FRAM 1MBIT SPI 40MHZ 8DIP |
|
SST39VF802C-70-4I-B3KE-TRoving Networks / Microchip Technology |
IC FLASH 8MBIT PARALLEL 48TFBGA |
|
M95010-WMN6TPSTMicroelectronics |
IC EEPROM 1KBIT SPI 20MHZ 8SO |
|
MT58L128L36P1T-10Rochester Electronics |
IC SRAM 4MBIT PARALLEL 100TQFP |
|
IS46DR16320C-25DBLA1ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 84TWBGA |
|
W9412G6KH-5Winbond Electronics Corporation |
IC DRAM 128MBIT PAR 66TSOP II |
|
MT29F32G08ABAAAWP-Z:A TRMicron Technology |
IC FLSH 32GBIT PARALLEL 48TSOP I |
|
CAT25040VE-GT3Rochester Electronics |
IC EEPROM 4KBIT SPI 20MHZ 8SOIC |
|
70V7319S133BFRenesas Electronics America |
IC SRAM 4.5MBIT PAR 208CABGA |
|
8403607JARochester Electronics |
2K X 8 CMOS RAM |
|
24LCS52-I/PRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 400KHZ 8DIP |
|
M95040-DFDW6TPSTMicroelectronics |
IC EEPROM 4KBIT SPI 20MHZ 8TSSOP |
|
71V65703S80BGRochester Electronics |
IC SRAM 9MBIT PARALLEL 119PBGA |
