类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 2Kb (256 x 8) |
内存接口: | I²C |
时钟频率: | 400 kHz |
写周期时间 - 字,页: | 5ms |
访问时间: | 900 ns |
电压 - 电源: | 2.2V ~ 5.5V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Through Hole |
包/箱: | 8-DIP (0.300", 7.62mm) |
供应商设备包: | 8-PDIP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
M95040-DFDW6TPSTMicroelectronics |
IC EEPROM 4KBIT SPI 20MHZ 8TSSOP |
|
71V65703S80BGRochester Electronics |
IC SRAM 9MBIT PARALLEL 119PBGA |
|
24AA512-I/STRoving Networks / Microchip Technology |
IC EEPROM 512KBIT I2C 8TSSOP |
|
AT25XV021A-XMHV-TAdesto Technologies |
IC FLASH 2MBIT SPI 70MHZ 8TSSOP |
|
GS8342D36BGD-300IGSI Technology |
IC SRAM 36MBIT PARALLEL 165FPBGA |
|
7142SA55CBRenesas Electronics America |
IC SRAM 16KBIT PARALLEL SB48 |
|
AS4C256M16D3C-10BCNAlliance Memory, Inc. |
IC DRAM 4GBIT PARALLEL 96FBGA |
|
IS26KS128S-DPBLI00ISSI (Integrated Silicon Solution, Inc.) |
IC FLASH 128MBIT PAR 24VFBGA |
|
AS6C2016-55ZINTRAlliance Memory, Inc. |
IC SRAM 2MBIT PARALLEL 44TSOP II |
|
AS4C512M16D3L-12BCNAlliance Memory, Inc. |
IC DRAM 8GBIT PARALLEL 96FBGA |
|
IS66WVE4M16EALL-70BLIISSI (Integrated Silicon Solution, Inc.) |
IC PSRAM 64MBIT PARALLEL 48TFBGA |
|
S29GL01GS11DHAV23Cypress Semiconductor |
IC FLASH 1GBIT PARALLEL 64FBGA |
|
UPD46184184BF1-E40-EQ1-ARochester Electronics |
DDR SRAM, 1MX18, 0.45NS |