English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Asynchronous |
| 内存大小: | 8Mb (512K x 16) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 10ns |
| 访问时间: | 10 ns |
| 电压 - 电源: | 3V ~ 3.6V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 44-TSOP (0.400", 10.16mm Width) |
| 供应商设备包: | 44-TSOP II |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
GS81302DT20GE-500IGSI Technology |
IC SRAM 144MBIT PAR 165FPBGA |
|
71V3577S80PFGIRochester Electronics |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
S25FL129P0XBHI310Rochester Electronics |
IC FLASH 128MBIT SPI/QUAD 24BGA |
|
S29GL01GP11FAIR10Flip Electronics |
IC FLASH 1GBIT PARALLEL 64BGA |
|
MR2A16AMYS35Everspin Technologies, Inc. |
IC RAM 4MBIT PARALLEL 44TSOP2 |
|
W949D6DBHX5EWinbond Electronics Corporation |
IC DRAM 512MBIT PARALLEL 60VFBGA |
|
IS42S16160G-6TL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PAR 54TSOP II |
|
MT48LC16M16A2P-6A XIT:G TRMicron Technology |
IC DRAM 256MBIT PAR 54TSOP II |
|
HN58X24512FPI#S0Rochester Electronics |
512K EEPROM (64K X 8 BIT) SERIAL |
|
AS7C3256A-12JINAlliance Memory, Inc. |
IC SRAM 256KBIT PARALLEL 28SOJ |
|
IS42S16320D-6BLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 54TFBGA |
|
CY62128BNLL-70SXCTRochester Electronics |
IC SRAM 1MBIT PARALLEL 32SOIC |
|
CY7C1612KV18-333BZXCRochester Electronics |
QDR SRAM, 8MX18, 0.45NS PBGA165 |
