类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Synchronous, SDR |
内存大小: | 4.5Mb (128K x 36) |
内存接口: | Parallel |
时钟频率: | 100 MHz |
写周期时间 - 字,页: | - |
访问时间: | 8 ns |
电压 - 电源: | 3.135V ~ 3.465V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 100-LQFP |
供应商设备包: | 100-TQFP (14x14) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
S25FL129P0XBHI310Rochester Electronics |
IC FLASH 128MBIT SPI/QUAD 24BGA |
|
S29GL01GP11FAIR10Flip Electronics |
IC FLASH 1GBIT PARALLEL 64BGA |
|
MR2A16AMYS35Everspin Technologies, Inc. |
IC RAM 4MBIT PARALLEL 44TSOP2 |
|
W949D6DBHX5EWinbond Electronics Corporation |
IC DRAM 512MBIT PARALLEL 60VFBGA |
|
IS42S16160G-6TL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PAR 54TSOP II |
|
MT48LC16M16A2P-6A XIT:G TRMicron Technology |
IC DRAM 256MBIT PAR 54TSOP II |
|
HN58X24512FPI#S0Rochester Electronics |
512K EEPROM (64K X 8 BIT) SERIAL |
|
AS7C3256A-12JINAlliance Memory, Inc. |
IC SRAM 256KBIT PARALLEL 28SOJ |
|
IS42S16320D-6BLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 54TFBGA |
|
CY62128BNLL-70SXCTRochester Electronics |
IC SRAM 1MBIT PARALLEL 32SOIC |
|
CY7C1612KV18-333BZXCRochester Electronics |
QDR SRAM, 8MX18, 0.45NS PBGA165 |
|
CY7C1007D-10VXIRochester Electronics |
STANDARD SRAM, 1MX1, 10NS PDSO28 |
|
043641QLAD-4Rochester Electronics |
256KX18 SRAM |