类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 128b (16 x 8) |
内存接口: | I²C |
时钟频率: | 400 kHz |
写周期时间 - 字,页: | 4ms |
访问时间: | 3500 ns |
电压 - 电源: | 2.5V ~ 5.5V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 8-SOIC (0.154", 3.90mm Width) |
供应商设备包: | 8-SOIC |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
11LC020T-I/SNRoving Networks / Microchip Technology |
IC EEPROM 2KBIT SGL WIRE 8SOIC |
|
IS42S32800J-75EBLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PARALLEL 90TFBGA |
|
70T659S15BC8Renesas Electronics America |
IC SRAM 4.5MBIT PAR 256CABGA |
|
24VL025/MSRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 400KHZ 8MSOP |
|
RM24C64C-LTAI-BAdesto Technologies |
IC CBRAM 64KBIT I2C 1MHZ 8TSSOP |
|
NM24C05LNRochester Electronics |
IC EEPROM 4KBIT I2C 100KHZ 8DIP |
|
CY7C1325B-100AIRochester Electronics |
CACHE SRAM, 256KX18, 8NS |
|
CY7C037V-15ACRochester Electronics |
IC SRAM 576KBIT PARALLEL 100TQFP |
|
S71KS512SC0BHB000Cypress Semiconductor |
IC FLASH RAM 512MBIT PAR 24FBGA |
|
70T651S15BFRenesas Electronics America |
IC SRAM 9MBIT PARALLEL 208CABGA |
|
CY15E016Q-SXETCypress Semiconductor |
IC FRAM 16KBIT SPI 16MHZ 8SOIC |
|
IS43DR16128C-3DBLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 2GBIT PARALLEL 84TWBGA |
|
71V124SA10PHGI8Renesas Electronics America |
IC SRAM 1MBIT PARALLEL 32TSOP II |