类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM - Mobile LPSDR |
内存大小: | 64Mb (4M x 16) |
内存接口: | Parallel |
时钟频率: | 125 MHz |
写周期时间 - 字,页: | 15ns |
访问时间: | 6 ns |
电压 - 电源: | 1.7V ~ 1.9V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 54-VFBGA |
供应商设备包: | 54-VFBGA (8x8) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IDT71124S15Y8Renesas Electronics America |
IC SRAM 1MBIT PARALLEL 32SOJ |
|
7140SA100JRenesas Electronics America |
IC SRAM 8KBIT PARALLEL 52PLCC |
|
AT45DB081B-CNU-2.5Roving Networks / Microchip Technology |
IC FLASH 8MBIT SPI 15MHZ 8CASON |
|
AT45DB081-TCRoving Networks / Microchip Technology |
IC FLASH 8MBIT SPI 10MHZ 28TSOP |
|
S34MS04G100TFB000SkyHigh Memory Limited |
IC FLASH 4G PARALLEL 48TSOP I |
|
W971GG6KB25I TRWinbond Electronics Corporation |
IC DRAM 1GBIT PARALLEL 84WBGA |
|
MT47H128M8CF-3 IT:HMicron Technology |
IC DRAM 1GBIT PARALLEL 60FBGA |
|
U6264BS2K07LLG1Alliance Memory, Inc. |
IC SRAM 64KBIT PARALLEL 28SOP |
|
IS61LF12836A-7.5TQI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
MT29F256G08CMCABH2-12ITZ:A TRMicron Technology |
IC FLASH 256GBIT PAR 100TBGA |
|
IS43DR16160A-3DBIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PARALLEL 84TWBGA |
|
MT46V16M8P-6T:DTRMicron Technology |
IC DRAM 128MBIT PARALLEL 66TSOP |
|
MT53D384M32D2DS-053 XT:C TRMicron Technology |
IC DRAM 12GBIT 1866MHZ 200WFBGA |