类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Asynchronous |
内存大小: | 64Kb (8K x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 20ns |
访问时间: | 20 ns |
电压 - 电源: | 4.5V ~ 5.5V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Through Hole |
包/箱: | 28-DIP (0.300", 7.62mm) |
供应商设备包: | 28-PDIP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
709089L15PF8Renesas Electronics America |
IC SRAM 512KBIT PARALLEL 100TQFP |
|
FT24C02A-5LR-TFremont Micro Devices |
IC EEPROM 2KBIT I2C 1MHZ SOT23-5 |
|
MT46V16M8TG-75:D TRMicron Technology |
IC DRAM 128MBIT PARALLEL 66TSOP |
|
IDT71V256SA15PZ8Renesas Electronics America |
IC SRAM 256KBIT PARALLEL 28TSOP |
|
AT27C010L-70TCRoving Networks / Microchip Technology |
IC EPROM 1MBIT PARALLEL 32TSOP |
|
AT24C02N-10SI-2.7-TRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 400KHZ 8SOIC |
|
AT93C56AW-10SU-2.7Roving Networks / Microchip Technology |
IC EEPROM 2KBIT SPI 2MHZ 8SOIC |
|
IS29GL512S-11DHV01Cypress Semiconductor |
IC FLASH 512MBIT PARALLEL 64FBGA |
|
AT27LV040A-90VCRoving Networks / Microchip Technology |
IC EPROM 4MBIT PARALLEL 32VSOP |
|
W9751G6KB-25 TRWinbond Electronics Corporation |
IC DRAM 512MBIT PARALLEL 84WBGA |
|
IS45S16100C1-7TLA1ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 16MBIT PAR 50TSOP II |
|
MT53E384M32D2DS-046 AAT:EMicron Technology |
IC DRAM 12GBIT 2.133GHZ 200WFBGA |
|
W25Q16DVUZIG TRWinbond Electronics Corporation |
IC FLASH 16MBIT SPI/QUAD 8USON |