English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Obsolete |
| 内存类型: | Non-Volatile |
| 内存格式: | NVSRAM |
| 技术: | NVSRAM (Non-Volatile SRAM) |
| 内存大小: | 256Kb (32K x 8) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 45ns |
| 访问时间: | 45 ns |
| 电压 - 电源: | 2.7V ~ 3.45V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 48-BSSOP (0.295", 7.50mm Width) |
| 供应商设备包: | 48-SSOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
7164L20TPGRenesas Electronics America |
IC SRAM 64KBIT PARALLEL 28DIP |
|
IDT71V67903S80PFIRenesas Electronics America |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
IS61LPS51236A-200B3LIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 18MBIT PARALLEL 165TFBGA |
|
IDT71V65803S133PFIRenesas Electronics America |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
TE28F256P33BFAMicron Technology |
IC FLASH 256MBIT PARALLEL 56TSOP |
|
MT47H32M16CC-5E IT:B TRMicron Technology |
IC DRAM 512MBIT PARALLEL 84FBGA |
|
DS1249Y-85INDMaxim Integrated |
IC NVSRAM 2MBIT PARALLEL 32EDIP |
|
R1EX24032ASAS0I#S0Renesas Electronics America |
IC EEPROM 32KBIT I2C 400KHZ 8SOP |
|
CAT25256LI-GSanyo Semiconductor/ON Semiconductor |
IC EEPROM 256KBIT SPI 20MHZ 8DIP |
|
CY7C1462SV25-200AXCTCypress Semiconductor |
IC SRAM 36MBIT PARALLEL 100TQFP |
|
SST39WF1601-70-4C-MBQE-TRoving Networks / Microchip Technology |
IC FLASH 16MBIT PARALLEL 48WFBGA |
|
AS4C8M16D1-5TCNTRAlliance Memory, Inc. |
IC DRAM 128MBIT PAR 66TSOP II |
|
AT29C512-70TURoving Networks / Microchip Technology |
IC FLASH 512KBIT PARALLEL 32TSOP |
