类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 2Kb (256 x 8) |
内存接口: | I²C |
时钟频率: | 400 kHz |
写周期时间 - 字,页: | 5ms |
访问时间: | 900 ns |
电压 - 电源: | 1.7V ~ 5.5V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 8-SOIC (0.154", 3.90mm Width) |
供应商设备包: | 8-SOIC |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
25AA160D-E/SN16KVAORoving Networks / Microchip Technology |
IC EEPROM 16KBIT SPI 10MHZ 8SOIC |
|
IDT71V67602S133BQGIRenesas Electronics America |
IC SRAM 9MBIT PARALLEL 165CABGA |
|
7025S30JRenesas Electronics America |
IC SRAM 128KBIT PARALLEL 84PLCC |
|
M29W160ET70N3EMicron Technology |
IC FLASH 16MBIT PARALLEL 48TSOP |
|
MT46H64M16LFBF-6 IT:BMicron Technology |
IC DRAM 1GBIT PARALLEL 60VFBGA |
|
25LC080CT-E/SN16KVAORoving Networks / Microchip Technology |
IC EEPROM 8KBIT SPI 10MHZ 8SOIC |
|
IDT71V67803S166PF8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
7140LA25JI8Renesas Electronics America |
IC SRAM 8KBIT PARALLEL 52PLCC |
|
IS41LV16105B-60KLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 16MBIT PARALLEL 42SOJ |
|
S25FL116K0XBHV020Cypress Semiconductor |
IC FLASH 16MBIT SPI/QUAD 24BGA |
|
W632GG8MB11JWinbond Electronics Corporation |
IC DRAM 2GBIT PARALLEL 78VFBGA |
|
W25Q128FVEIQ TRWinbond Electronics Corporation |
IC FLASH 128MBIT SPI/QUAD 8WSON |
|
IDT71V416VS15BEGI8Renesas Electronics America |
IC SRAM 4MBIT PARALLEL 48CABGA |