类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM |
内存大小: | 256Mb (16M x 16) |
内存接口: | Parallel |
时钟频率: | 167 MHz |
写周期时间 - 字,页: | 12ns |
访问时间: | 5.4 ns |
电压 - 电源: | 3V ~ 3.6V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 54-TSOP (0.400", 10.16mm Width) |
供应商设备包: | 54-TSOP II |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
N25Q128A23BSF40GMicron Technology |
IC FLASH 128MBIT SPI 16SO W |
|
IS41LV16100B-50TL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 16MBIT PAR 44TSOP II |
|
R1RW0416DSB-2PI#D1Renesas Electronics America |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
MT44K16M36RB-125E:A TRMicron Technology |
IC DRAM 576MBIT PARALLEL 168BGA |
|
CAT28C256GI-12TSanyo Semiconductor/ON Semiconductor |
IC EEPROM 256KBIT PAR 32PLCC |
|
DS1258Y-100Maxim Integrated |
IC NVSRAM 2MBIT PARALLEL 40EDIP |
|
SST49LF016C-33-4C-EIERoving Networks / Microchip Technology |
IC FLASH 16MBIT PARALLEL 40TSOP |
|
IS42SM32800E-75BLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PARALLEL 90TFBGA |
|
CY7C019V-20AXCCypress Semiconductor |
IC SRAM 1.152MBIT PAR 100TQFP |
|
M30LW128D110ZA6STMicroelectronics |
IC FLASH 128MBIT PARALLEL 64TBGA |
|
IDT71T75602S100PFGRenesas Electronics America |
IC SRAM 18MBIT PARALLEL 100TQFP |
|
IS43DR81280C-3DBI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 1GBIT PARALLEL 60TWBGA |
|
70V05L20PFI8Renesas Electronics America |
IC SRAM 64KBIT PARALLEL 64TQFP |