English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 内存类型: | Non-Volatile |
| 内存格式: | NVSRAM |
| 技术: | NVSRAM (Non-Volatile SRAM) |
| 内存大小: | 2Mb (128K x 16) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 100ns |
| 访问时间: | 100 ns |
| 电压 - 电源: | 4.5V ~ 5.5V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Through Hole |
| 包/箱: | 40-DIP Module (0.610", 15.495mm) |
| 供应商设备包: | 40-EDIP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SST49LF016C-33-4C-EIERoving Networks / Microchip Technology |
IC FLASH 16MBIT PARALLEL 40TSOP |
|
IS42SM32800E-75BLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PARALLEL 90TFBGA |
|
CY7C019V-20AXCCypress Semiconductor |
IC SRAM 1.152MBIT PAR 100TQFP |
|
M30LW128D110ZA6STMicroelectronics |
IC FLASH 128MBIT PARALLEL 64TBGA |
|
IDT71T75602S100PFGRenesas Electronics America |
IC SRAM 18MBIT PARALLEL 100TQFP |
|
IS43DR81280C-3DBI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 1GBIT PARALLEL 60TWBGA |
|
70V05L20PFI8Renesas Electronics America |
IC SRAM 64KBIT PARALLEL 64TQFP |
|
AT29LV040A-15JU-TRoving Networks / Microchip Technology |
IC FLASH 4MBIT PARALLEL 32PLCC |
|
IDT71T75602S200PFGRenesas Electronics America |
IC SRAM 18MBIT PARALLEL 100TQFP |
|
M28W320FCT70N6F TRMicron Technology |
IC FLASH 32MBIT PARALLEL 48TSOP |
|
AT24C128C-XPD-TRoving Networks / Microchip Technology |
IC EEPROM 128KBIT I2C 8TSSOP |
|
NAND01GW3B2BZA6EMicron Technology |
IC FLASH 1GBIT PARALLEL 63VFBGA |
|
IS42S16400D-6BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 64MBIT PAR 60MINIBGA |
