类型 | 描述 |
---|---|
系列: | GL-N |
包裹: | Tape & Reel (TR) |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NOR |
内存大小: | 64Mb (8M x 8, 4M x 16) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 90ns |
访问时间: | 90 ns |
电压 - 电源: | 2.7V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 64-LBGA |
供应商设备包: | 64-FBGA (13x11) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
AT24C02N-10SC-1.8Roving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 400KHZ 8SOIC |
|
CY7C1362C-250AJXCCypress Semiconductor |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
IDT71T75702S85PFIRenesas Electronics America |
IC SRAM 18MBIT PARALLEL 100TQFP |
|
24FC256T-I/MNYRoving Networks / Microchip Technology |
IC EEPROM 256KBIT I2C 1MHZ 8TDFN |
|
7008L15J8Renesas Electronics America |
IC SRAM 512KBIT PARALLEL 84PLCC |
|
7025L20PF8Renesas Electronics America |
IC SRAM 128KBIT PARALLEL 100TQFP |
|
IS29GL256S-10DHB02Cypress Semiconductor |
IC FLASH 256MBIT PARALLEL 64FBGA |
|
QMP29GL512P11TFI020Cypress Semiconductor |
IC FLASH 512MBIT PARALLEL 56TSOP |
|
7026S35JRenesas Electronics America |
IC SRAM 256KBIT PARALLEL 84PLCC |
|
IS62C1024AL-35TI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 1MBIT PARALLEL 32TSOP I |
|
MT46V16M8P-75:D TRMicron Technology |
IC DRAM 128MBIT PARALLEL 66TSOP |
|
IS61QDB41M36-250M3ISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 36MBIT PARALLEL 165LFBGA |
|
IDT71V2576S133PFIRenesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 100TQFP |