类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 64Kb (8K x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 1ms |
访问时间: | 200 ns |
电压 - 电源: | 4.5V ~ 5.5V |
工作温度: | -40°C ~ 85°C (TC) |
安装类型: | Surface Mount |
包/箱: | 32-LCC (J-Lead) |
供应商设备包: | 32-PLCC (13.97x11.43) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
GD25VQ16CTIGGigaDevice |
IC FLASH 16MBIT SPI/QUAD 8SOP |
|
70V28L15PFRenesas Electronics America |
IC SRAM 1MBIT PARALLEL 100TQFP |
|
70V24L25PFRenesas Electronics America |
IC SRAM 64KBIT PARALLEL 100TQFP |
|
MT41J128M8JP-107:GMicron Technology |
IC DRAM 1GBIT PARALLEL 78FBGA |
|
N25Q128A13E1240EMicron Technology |
IC FLASH 128MBIT SPI 24TPBGA |
|
IS46DR81280B-25DBLA2-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 1GBIT PARALLEL 60TWBGA |
|
W25Q64FVTBIPWinbond Electronics Corporation |
IC FLASH 64MBIT SPI/QUAD 24TFBGA |
|
MT45W1MW16BAFB-856 WTMicron Technology |
IC PSRAM 16MBIT PARALLEL 54VFBGA |
|
LHF00L28Sharp Microelectronics |
IC FLASH 16MBIT PARALLEL 48TSOP |
|
IS43DR16160A-37CBLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PAR 84TWBGA |
|
MT46V32M8P-5B IT:KMicron Technology |
IC DRAM 256MBIT PARALLEL 66TSOP |
|
IS61LF102418A-7.5TQISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 18MBIT PARALLEL 100TQFP |
|
IDT71V2576YS150PFRenesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 100TQFP |