English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Obsolete |
| 内存类型: | Volatile |
| 内存格式: | DRAM |
| 技术: | SDRAM |
| 内存大小: | 256Mb (8M x 32) |
| 内存接口: | Parallel |
| 时钟频率: | 133 MHz |
| 写周期时间 - 字，页: | - |
| 访问时间: | 5.5 ns |
| 电压 - 电源: | 3V ~ 3.6V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 86-TFSOP (0.400", 10.16mm Width) |
| 供应商设备包: | 86-TSOP II |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
AT25640AN-10SI-1.8-TRoving Networks / Microchip Technology |
IC EEPROM 64KBIT SPI 20MHZ 8SOIC |
|
IDT71V3559SA85BGRenesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 119PBGA |
|
IDT71V65802S150BG8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 119PBGA |
|
CY7C1472V33-167AXITCypress Semiconductor |
IC SRAM 72MBIT PARALLEL 100TQFP |
|
709379L12PF8Renesas Electronics America |
IC SRAM 576KBIT PARALLEL 100TQFP |
|
IS46TR16128A-125KBLA2ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 2GBIT PARALLEL 96TWBGA |
|
SST39SF010A-45-4I-NHE-TRoving Networks / Microchip Technology |
IC FLASH 1MBIT PARALLEL 32PLCC |
|
AT49BV1614T-11CIRoving Networks / Microchip Technology |
IC FLASH 16MBIT PARALLEL 48TSOP |
|
AT27C512R-70PCRoving Networks / Microchip Technology |
IC EPROM 512KBIT PARALLEL 28DIP |
|
NM27C512Q150Sanyo Semiconductor/ON Semiconductor |
IC EPROM 512KBIT PARALLEL 28CDIP |
|
AT29LV040A-15TIRoving Networks / Microchip Technology |
IC FLASH 4MBIT PARALLEL 32TSOP |
|
AT27LV512A-12JCRoving Networks / Microchip Technology |
IC EPROM 512KBIT PARALLEL 32PLCC |
|
MT48LC16M16A2P-7E:GMicron Technology |
IC DRAM 256MBIT PAR 54TSOP II |
