English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Asynchronous |
| 内存大小: | 4Mb (512K x 8) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 15ns |
| 访问时间: | 15 ns |
| 电压 - 电源: | 3V ~ 3.6V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 44-TSOP (0.400", 10.16mm Width) |
| 供应商设备包: | 44-TSOP II |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
W25Q128FVPJQWinbond Electronics Corporation |
IC FLASH 128MBIT SPI/QUAD 8WSON |
|
AT25320T1-10TI-2.7Roving Networks / Microchip Technology |
IC EEPROM 32KBIT SPI 14TSSOP |
|
IS61VF102418A-6.5B3IISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 18MBIT PARALLEL 165TFBGA |
|
S34MS01G200TFI903SkyHigh Memory Limited |
IC FLASH 1G PARALLEL 48TSOP I |
|
7027S25PFRenesas Electronics America |
IC SRAM 512KBIT PARALLEL 100TQFP |
|
70V657S12DRIRenesas Electronics America |
IC SRAM 1.125MBIT PAR 208PQFP |
|
CY7C1361C-100BGCTCypress Semiconductor |
IC SRAM 9MBIT PARALLEL 119PBGA |
|
MT53D384M32D2DS-046 WT ES:EMicron Technology |
IC DRAM 12GBIT 2133MHZ 200WFBGA |
|
IDT71V416YL10YRenesas Electronics America |
IC SRAM 4MBIT PARALLEL 44SOJ |
|
IDT71V65603S100PF8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
M24C08-RDS6GSTMicroelectronics |
IC EEPROM 8KBIT I2C 400KHZ 8MSOP |
|
IS42S32200C1-6TL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 64MBIT PAR 86TSOP II |
|
N25Q064A13ESEC0GMicron Technology |
IC FLASH 64MBIT SPI 108MHZ 8SO W |
