类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM - Mobile LPDDR |
内存大小: | 512Mb (32M x 16) |
内存接口: | Parallel |
时钟频率: | 166 MHz |
写周期时间 - 字,页: | 15ns |
访问时间: | 700 ps |
电压 - 电源: | 1.7V ~ 1.9V |
工作温度: | -25°C ~ 85°C (TJ) |
安装类型: | Surface Mount |
包/箱: | 60-TFBGA |
供应商设备包: | 60-FPBGA (8x9) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MT40A256M16GE-062E:BMicron Technology |
IC DRAM 4GBIT PARALLEL 96FBGA |
|
RM3315-SNI-TAdesto Technologies |
IC EEPROM 128KBIT SPI 1MHZ 8SOIC |
|
AT93C66-10PI-2.5Roving Networks / Microchip Technology |
IC EEPROM 4KBIT SPI 2MHZ 8DIP |
|
W632GG6MB-18Winbond Electronics Corporation |
IC DRAM 2GBIT PARALLEL 96VFBGA |
|
FM25640B-G2Cypress Semiconductor |
IC FRAM 64KBIT SPI 20MHZ 8SOIC |
|
W631GU8KB15I TRWinbond Electronics Corporation |
IC DRAM 1GBIT PARALLEL 78WBGA |
|
IDT71V416VS15YI8Renesas Electronics America |
IC SRAM 4MBIT PARALLEL 44SOJ |
|
AS4C512M8D3L-12BINAlliance Memory, Inc. |
IC DRAM 4GBIT PARALLEL 78FBGA |
|
MT25QU256ABA8ESF-0SITMicron Technology |
IC FLASH 256MBIT SPI 133MHZ 16SO |
|
IS62WV10248DBLL-55MLIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 8MBIT PARALLEL 48MINIBGA |
|
AT28C64B-15TIRoving Networks / Microchip Technology |
IC EEPROM 64KBIT PARALLEL 28TSOP |
|
M25PX64-VZM6TP TRMicron Technology |
IC FLSH 64MBIT SPI 75MHZ 24TPBGA |
|
STK22C48-NF25ICypress Semiconductor |
IC NVSRAM 16KBIT PARALLEL 28SOIC |