类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM - DDR3 |
内存大小: | 2Gb (128M x 16) |
内存接口: | Parallel |
时钟频率: | 800 MHz |
写周期时间 - 字,页: | 15ns |
访问时间: | 20 ns |
电压 - 电源: | 1.425V ~ 1.575V |
工作温度: | -40°C ~ 105°C (TC) |
安装类型: | Surface Mount |
包/箱: | 96-TFBGA |
供应商设备包: | 96-TWBGA (9x13) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
W631GU6KB-15Winbond Electronics Corporation |
IC DRAM 1GBIT PARALLEL 96WBGA |
|
93LC56B-I/SN15KVAORoving Networks / Microchip Technology |
IC EEPROM 2KBIT SPI 3MHZ 8SOIC |
|
IS43LR16800F-6BL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PARALLEL 60TFBGA |
|
IS46TR16640CL-125JBLA1ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 1GBIT PARALLEL 96TWBGA |
|
IS42RM32800D-75BLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PARALLEL 90TFBGA |
|
FM24V01-GTRCypress Semiconductor |
IC FRAM 128KBIT I2C 3.4MHZ 8SOIC |
|
24LC512-E/SN16KVAORoving Networks / Microchip Technology |
IC EEPROM 512KBIT I2C 8SOIC |
|
CY14B104NA-BA25ITCypress Semiconductor |
IC NVSRAM 4MBIT PARALLEL 48FBGA |
|
AT27BV512-90RIRoving Networks / Microchip Technology |
IC EPROM 512KBIT PARALLEL 28SOIC |
|
MT53D384M32D2DS-053 XT:CMicron Technology |
IC DRAM 12GBIT 1866MHZ 200WFBGA |
|
71321SA25JRenesas Electronics America |
IC SRAM 16KBIT PARALLEL 52PLCC |
|
IDT7164LS20YRenesas Electronics America |
IC SRAM 64KBIT PARALLEL 28SOJ |
|
DS1220AD-200INDMaxim Integrated |
IC NVSRAM 16KBIT PARALLEL 24EDIP |