类型 | 描述 |
---|---|
系列: | SST25 |
包裹: | Tube |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH |
内存大小: | 4Mb (512K x 8) |
内存接口: | SPI |
时钟频率: | 80 MHz |
写周期时间 - 字,页: | 10µs |
访问时间: | - |
电压 - 电源: | 2.7V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 8-SOIC (0.209", 5.30mm Width) |
供应商设备包: | 8-SOIC |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
93C86AT-I/STRoving Networks / Microchip Technology |
IC EEPROM 16KBIT SPI 3MHZ 8TSSOP |
|
IDT7164S35YGRenesas Electronics America |
IC SRAM 64KBIT PARALLEL 28SOJ |
|
IS42S32800B-7TLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PAR 86TSOP II |
|
IDT7164L35YGI8Renesas Electronics America |
IC SRAM 64KBIT PARALLEL 28SOJ |
|
IDT71V3577SA85BQI8Renesas Electronics America |
IC SRAM 4.5MBIT PAR 165CABGA |
|
MTFC16GAKAENA-4M ITMicron Technology |
IC FLASH 128GBIT MMC 100TBGA |
|
MT29F256G08CKCABH2-12Z:AMicron Technology |
IC FLASH 256GBIT PAR 100TBGA |
|
71321LA55JRenesas Electronics America |
IC SRAM 16KBIT PARALLEL 52PLCC |
|
JS28F00AP33EF0Micron Technology |
IC FLASH 1GBIT PARALLEL 56TSOP |
|
AT25010AY1-10YI-2.7Roving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 20MHZ 8MAP |
|
MT25QU01GBBB8ESF-0SITMicron Technology |
IC FLASH 1GBIT SPI 166MHZ 16SOP2 |
|
93C86B-I/MSRoving Networks / Microchip Technology |
IC EEPROM 16KBIT SPI 3MHZ 8MSOP |
|
IDT71V416YS12YIRenesas Electronics America |
IC SRAM 4MBIT PARALLEL 44SOJ |