类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH |
内存大小: | 512Kb (64K x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 50µs |
访问时间: | 70 ns |
电压 - 电源: | 4.5V ~ 5.5V |
工作温度: | -40°C ~ 85°C (TC) |
安装类型: | Through Hole |
包/箱: | 32-DIP (0.600", 15.24mm) |
供应商设备包: | 32-PDIP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IDT71P73604S167BQ8Renesas Electronics America |
IC SRAM 18MBIT PARALLEL 165CABGA |
|
AT28HC256F-12TARoving Networks / Microchip Technology |
IC EEPROM 256KBIT PAR 28TSOP |
|
IDT71V424L12PHRenesas Electronics America |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
AT49F516-70VIRoving Networks / Microchip Technology |
IC FLASH 512KBIT PARALLEL 40VSOP |
|
AT27C2048-70PIRoving Networks / Microchip Technology |
IC EPROM 2MBIT PARALLEL 40DIP |
|
IDT71P73804S167BQ8Renesas Electronics America |
IC SRAM 18MBIT PARALLEL 165CABGA |
|
IS42S32200C1-6TLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 64MBIT PAR 86TSOP II |
|
AS4C32M16D2-25BCNTRAlliance Memory, Inc. |
IC DRAM 512MBIT PARALLEL 84TFBGA |
|
IDT71V416VL12YRenesas Electronics America |
IC SRAM 4MBIT PARALLEL 44SOJ |
|
NAND256W3A0AN6STMicroelectronics |
IC FLASH 256MBIT PARALLEL 48TSOP |
|
MT47H32M16CC-3:B TRMicron Technology |
IC DRAM 512MBIT PARALLEL 84FBGA |
|
MT46V32M4P-6T:D TRMicron Technology |
IC DRAM 128MBIT PARALLEL 66TSOP |
|
CY7C1049CV33-15ZSXETCypress Semiconductor |
IC SRAM 4MBIT PARALLEL 44TSOP II |