类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH |
内存大小: | 512Kb (64K x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 120ns |
访问时间: | 120 ns |
电压 - 电源: | 4.5V ~ 5.5V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 32-LCC (J-Lead) |
供应商设备包: | 32-PLCC (11.43x13.97) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
W25Q32FWZPIGWinbond Electronics Corporation |
IC FLASH 32MBIT SPI/QUAD 8WSON |
|
AT34C02-10TI-1.8-TRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 8TSSOP |
|
MT29F2G08ABBEAH4:EMicron Technology |
IC FLASH 2GBIT PARALLEL 63VFBGA |
|
IS25LP256D-RGLE-TRISSI (Integrated Silicon Solution, Inc.) |
IC FLASH 256MBIT SERIAL 24TFBGA |
|
AT93C66W-10SI-1.8Roving Networks / Microchip Technology |
IC EEPROM 4KBIT SPI 2MHZ 8SOIC |
|
W25X20AVSNIGWinbond Electronics Corporation |
IC FLASH 2MBIT SPI 100MHZ 8SOIC |
|
AT24C512BW-SH-TRoving Networks / Microchip Technology |
IC EEPROM 512KBIT I2C 1MHZ 8SOIC |
|
IS61NLF25636A-7.5B2IISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 9MBIT PARALLEL 119PBGA |
|
IS42S16100F-6TLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 16MBIT PAR 50TSOP II |
|
AT28HC256-12PCRoving Networks / Microchip Technology |
IC EEPROM 256KBIT PARALLEL 28DIP |
|
MT46V32M8FG-75:GMicron Technology |
IC DRAM 256MBIT PARALLEL 60FBGA |
|
S-93C66CD0H-K8T2U3ABLIC U.S.A. Inc. |
IC EEPROM 4KBIT SPI 2MHZ 8TMSOP |
|
AT24C128W-10SCRoving Networks / Microchip Technology |
IC EEPROM 128KBIT I2C 1MHZ 8SOIC |