English
简体中文
FET RF 40V 2GHZ M243
IC SRAM 18MBIT PARALLEL 100TQFP
FIXED IND 3.3UH 1.74A 67 MOHM
CONN RCPT FMALE 37POS GOLD CRIMP
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | NoBL™ |
| 包裹: | Tray |
| 零件状态: | Obsolete |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Synchronous, SDR |
| 内存大小: | 18Mb (512K x 36) |
| 内存接口: | Parallel |
| 时钟频率: | 167 MHz |
| 写周期时间 - 字，页: | - |
| 访问时间: | 3.4 ns |
| 电压 - 电源: | 3.135V ~ 3.6V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 100-LQFP |
| 供应商设备包: | 100-TQFP (14x20) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
MT46V32M16TG-6T IT:F TRMicron Technology |
IC DRAM 512MBIT PARALLEL 66TSOP |
|
IDT71V3579S75PFIRenesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
7007L25PFRenesas Electronics America |
IC SRAM 256KBIT PARALLEL 80TQFP |
|
IS49NLC36800-33BIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 288MBIT PAR 144FCBGA |
|
MT46H32M32LFJG-5 IT:AMicron Technology |
IC DRAM 1GBIT PARALLEL 168VFBGA |
|
IDT71V3557S80BQIRenesas Electronics America |
IC SRAM 4.5MBIT PAR 165CABGA |
|
MT29F1G16ABBDAH4:DMicron Technology |
IC FLASH 1GBIT PARALLEL 63VFBGA |
|
IS43LR32800F-6BL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PARALLEL 90TFBGA |
|
AT27BV020-15JIRoving Networks / Microchip Technology |
IC EPROM 2MBIT PARALLEL 32PLCC |
|
AT28HC256F-70PIRoving Networks / Microchip Technology |
IC EEPROM 256KBIT PARALLEL 28DIP |
|
X28HC256JI-90R5420Intersil (Renesas Electronics America) |
IC EEPROM 256KBIT PAR 32PLCC |
|
W25X40BVSSIGWinbond Electronics Corporation |
IC FLASH 4MBIT SPI 104MHZ 8SOIC |
|
AT28BV256-20TIRoving Networks / Microchip Technology |
IC EEPROM 256KBIT PAR 28TSOP |