类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Asynchronous |
内存大小: | 4Mb (256K x 16) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 15ns |
访问时间: | 15 ns |
电压 - 电源: | 3V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 44-TSOP (0.400", 10.16mm Width) |
供应商设备包: | 44-TSOP II |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IDT71P73604S250BQ8Renesas Electronics America |
IC SRAM 18MBIT PARALLEL 165CABGA |
|
IS42S32800D-75EBIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PARALLEL 90TFBGA |
|
7024S25PF8Renesas Electronics America |
IC SRAM 64KBIT PARALLEL 100TQFP |
|
IDT71V3556S133BGRenesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 119PBGA |
|
71V35761S183BGI8Renesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 119PBGA |
|
IDT71V65802ZS133BGRenesas Electronics America |
IC SRAM 9MBIT PARALLEL 119PBGA |
|
AT27LV010A-12VCRoving Networks / Microchip Technology |
IC EPROM 1MBIT PARALLEL 32VSOP |
|
IS61LV25616AL-10TIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
M29W128FH70N6EMicron Technology |
IC FLASH 128MBIT PARALLEL 56TSOP |
|
AT28C17-20PCRoving Networks / Microchip Technology |
IC EEPROM 16KBIT PARALLEL 28DIP |
|
S25FL129P0XBHIY03Cypress Semiconductor |
IC FLASH 128MBIT SPI/QUAD 24BGA |
|
W25Q32FVSSIQWinbond Electronics Corporation |
IC FLASH 32MBIT SPI/QUAD 8SOIC |
|
IDT6116SA35TPGRenesas Electronics America |
IC SRAM 16KBIT PARALLEL 24DIP |