English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Obsolete |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - DDR2 |
| 内存大小: | 18Mb (512K x 36) |
| 内存接口: | Parallel |
| 时钟频率: | 250 MHz |
| 写周期时间 - 字，页: | - |
| 访问时间: | 6.3 ns |
| 电压 - 电源: | 1.7V ~ 1.9V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 165-TBGA |
| 供应商设备包: | 165-CABGA (13x15) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IS42S32800D-75EBIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PARALLEL 90TFBGA |
|
7024S25PF8Renesas Electronics America |
IC SRAM 64KBIT PARALLEL 100TQFP |
|
IDT71V3556S133BGRenesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 119PBGA |
|
71V35761S183BGI8Renesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 119PBGA |
|
IDT71V65802ZS133BGRenesas Electronics America |
IC SRAM 9MBIT PARALLEL 119PBGA |
|
AT27LV010A-12VCRoving Networks / Microchip Technology |
IC EPROM 1MBIT PARALLEL 32VSOP |
|
IS61LV25616AL-10TIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
M29W128FH70N6EMicron Technology |
IC FLASH 128MBIT PARALLEL 56TSOP |
|
AT28C17-20PCRoving Networks / Microchip Technology |
IC EEPROM 16KBIT PARALLEL 28DIP |
|
S25FL129P0XBHIY03Cypress Semiconductor |
IC FLASH 128MBIT SPI/QUAD 24BGA |
|
W25Q32FVSSIQWinbond Electronics Corporation |
IC FLASH 32MBIT SPI/QUAD 8SOIC |
|
IDT6116SA35TPGRenesas Electronics America |
IC SRAM 16KBIT PARALLEL 24DIP |
|
CY7C1370D-200AXICypress Semiconductor |
IC SRAM 18MBIT PARALLEL 100TQFP |
