类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Asynchronous |
内存大小: | 4Mb (256K x 16) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 12ns |
访问时间: | 12 ns |
电压 - 电源: | 3V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 44-TSOP (0.400", 10.16mm Width) |
供应商设备包: | 44-TSOP II |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
M27W401-80N6STMicroelectronics |
IC EPROM 4MBIT PARALLEL 32TSOP |
|
7132SA35J8Renesas Electronics America |
IC SRAM 16KBIT PARALLEL 52PLCC |
|
AT24C512-10PU-1.8Roving Networks / Microchip Technology |
IC EEPROM 512KBIT I2C 8DIP |
|
FT24C02A-UNR-TFremont Micro Devices |
IC EEPROM 2KBIT I2C 1MHZ 8DFN |
|
AS7C31026C-10BINAlliance Memory, Inc. |
IC SRAM 1MBIT PARALLEL 48BGA |
|
AT25FS010N-SH27-BRoving Networks / Microchip Technology |
IC FLASH 1MBIT SPI 50MHZ 8SOIC |
|
S29CD016J0PFFM113Cypress Semiconductor |
IC FLASH 16MBIT PARALLEL 80FBGA |
|
RMWV6416AGSD-5S2#HA0Renesas Electronics America |
IC SRAM 64MBIT PAR 52TSOP II |
|
S29WS512PABBFW000Cypress Semiconductor |
IC FLASH 512MBIT PARALLEL 84FBGA |
|
MT47H64M16HR-25E L:G TRMicron Technology |
IC DRAM 1GBIT PARALLEL 84FBGA |
|
R1LV0816ABG-7SI#S0Renesas Electronics America |
IC SRAM 8MBIT PARALLEL 48FBGA |
|
IS43TR85120A-125KBLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 4GBIT PARALLEL 78TWBGA |
|
MT48H4M16LFB4-8 IT TRMicron Technology |
IC DRAM 64MBIT PARALLEL 54VFBGA |