English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | * |
| 包裹: | Bulk |
| 零件状态: | Active |
| 内存类型: | - |
| 内存格式: | - |
| 技术: | - |
| 内存大小: | - |
| 内存接口: | - |
| 时钟频率: | - |
| 写周期时间 - 字，页: | - |
| 访问时间: | - |
| 电压 - 电源: | - |
| 工作温度: | - |
| 安装类型: | - |
| 包/箱: | - |
| 供应商设备包: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SST39LF040-55-4C-WHE-TRoving Networks / Microchip Technology |
IC FLASH 4MBIT PARALLEL 32TSOP |
|
|
MT40A8G4BAF-062E:BMicron Technology |
IC FLASH 32GBIT PARALLEL 78FBGA |
|
|
7MP4120S25MRochester Electronics |
256K X 32 BICMOS/SRAM MODULE |
|
|
CAT25020VGI-T3Rochester Electronics |
IC EEPROM 2KBIT SPI 20MHZ 8SOIC |
|
|
GD25LQ16C8IGRGigaDevice |
IC FLASH 16MBIT SPI/QUAD 8LGA |
|
|
DS2704RQ-C0B+TRRochester Electronics |
1280 BIT EEPROM WITH SHA-1 AUTHE |
|
|
CY7C199CN-12VXAKJTRochester Electronics |
DUAL PORT RAM |
|
|
MT28EW128ABA1HPN-0SIT TRMicron Technology |
IC FLSH 128MBIT PARALLEL 56VFBGA |
|
|
EM6GE08EW8D-10HEtron Technology |
IC DRAM 4GBIT PARALLEL 78FBGA |
|
|
MT29RZ4C4DZZMGGM-18W.80C TRMicron Technology |
IC FLASH RAM 4G PARALLEL 533MHZ |
|
|
CAT24C04C5ATRSanyo Semiconductor/ON Semiconductor |
IC EEPROM 4KBIT I2C 5WLCSP |
|
|
MTFC16GAKAEEF-O1 AIT TRMicron Technology |
IC FLASH 128GBIT MMC 169TFBGA |
|
|
70V26L55GRenesas Electronics America |
IC SRAM 256KBIT PARALLEL 84PGA |
