English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | MoBL® |
| 包裹: | Tray |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Asynchronous |
| 内存大小: | 8Mb (512K x 16) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 45ns |
| 访问时间: | 45 ns |
| 电压 - 电源: | 2.2V ~ 3.6V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 48-TFSOP (0.724", 18.40mm Width) |
| 供应商设备包: | 48-TSOP I |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
CG7634AARochester Electronics |
PREMIS SSCG EMI REDUCTION |
|
|
5962-9166202MXARenesas Electronics America |
IC SRAM 64KBIT PARALLEL 84PGA |
|
|
5962-8976404MXARenesas Electronics America |
IC SRAM 32KBIT PARALLEL SB48 |
|
|
7006L35GBRenesas Electronics America |
IC SRAM 128KBIT PARALLEL 68PGA |
|
|
FM93C66ALEMT8XRochester Electronics |
EEPROM, 256X16, SERIAL, CMOS |
|
|
5962-9089901MUARochester Electronics |
FLASH, 128KX8, 250NS, CDFP32 |
|
|
MT53B1024M32D4NQ-062 WT:C TRMicron Technology |
IC DRAM 32GBIT 1600MHZ 200VFBGA |
|
|
IS43R16320F-6TLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PAR 66TSOP II |
|
|
CG7339AMRochester Electronics |
SPECIAL |
|
|
70V26L25GRenesas Electronics America |
IC SRAM 256KBIT PARALLEL 84PGA |
|
|
S29GL01GT11DHB020Cypress Semiconductor |
IC FLASH 1GBIT PARALLEL 64FBGA |
|
|
27LV512-20/L089Rochester Electronics |
512K (64K X 8) CMOS EPROM |
|
|
5962-8976406MYARenesas Electronics America |
IC SRAM 32KBIT PARALLEL 48LCC |
