类型 | 描述 |
---|---|
系列: | Automotive, AEC-Q100 |
包裹: | Tray |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM - Mobile LPDDR4 |
内存大小: | 24Gb (768M x 32) |
内存接口: | - |
时钟频率: | 1.6 GHz |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | 1.1V |
工作温度: | -40°C ~ 95°C (TC) |
安装类型: | Surface Mount |
包/箱: | 200-VFBGA |
供应商设备包: | 200-VFBGA (10x14.5) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
CG8613AATCypress Semiconductor |
IC USB PERIPHERAL FULL SPEED |
|
520966231076Cypress Semiconductor |
IC FLASH NOR |
|
DSHB1Q01+Maxim Integrated |
IC MEMORY |
|
25AA256/S16KRoving Networks / Microchip Technology |
IC EEPROM 256KBIT SPI 10MHZ DIE |
|
IS43TR16512S2DL-125KBLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 8GBIT PARALLEL 96LWBGA |
|
SST26VF064BT-104V/TDRoving Networks / Microchip Technology |
IC FLASH 64MBIT SPI/QUAD 24TBGA |
|
70V27S25PFI8Renesas Electronics America |
IC SRAM 512KBIT PARALLEL 100TQFP |
|
IS62WV25616EBLL-45TI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
7005S25PFI8Renesas Electronics America |
IC SRAM 64KBIT PARALLEL 64TQFP |
|
MTFC4GLYAM-WTMicron Technology |
IC FLASH 32GBIT MMC 153VFBGA |
|
MT61M256M32JE-12 N:A TRMicron Technology |
IC RAM 8GBIT PARALLEL 180FBGA |
|
MT29F4G16ABAEAH4-IT:EMicron Technology |
IC FLASH 4GBIT PARALLEL 63VFBGA |
|
MT42L256M64D4LD-18 WT:A TRMicron Technology |
IC DRAM 16GBIT PARALLEL 220FBGA |