类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NOR |
内存大小: | 128Mb (16M x 8, 8M x 16) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 70ns |
访问时间: | 70 ns |
电压 - 电源: | 2.7V ~ 3.6V |
工作温度: | -40°C ~ 125°C (TA) |
安装类型: | Surface Mount |
包/箱: | 64-TBGA |
供应商设备包: | 64-TBGA (10x13) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
7006L25J8Renesas Electronics America |
IC SRAM 128KBIT PARALLEL 68PLCC |
|
MT29PZZZ8D4BKFSK-18 W.94L TRMicron Technology |
MOD EMMC NAND 4GB 162VFBGA |
|
MT53D512M64D4SB-046 XT:DMicron Technology |
IC DRAM 32GBIT 2133MHZ |
|
EDBM432B3PF-1D-F-R TRMicron Technology |
IC DRAM 12GBIT PARALLEL 168FBGA |
|
MT29F64G08AKCBBH2-12:BMicron Technology |
IC FLASH 64GBIT PARALLEL 100TBGA |
|
591289-001-00Cypress Semiconductor |
IC FLASH |
|
P770015CF8C011Cypress Semiconductor |
IC GATE NOR |
|
MT41K256M16TW-17 XIT:P TRMicron Technology |
IC SDRAM 4GBIT 800MHZ 96FBGA |
|
MT40A1G8WE-083E AAT:BMicron Technology |
IC DRAM 8GBIT PARALLEL 78FBGA |
|
7130LA55TFIRenesas Electronics America |
IC SRAM 8KBIT PARALLEL 64TQFP |
|
MT47H256M8THN-3:H TRMicron Technology |
IC DRAM 2GBIT PARALLEL 63FBGA |
|
MT53E1G64D8NW-053 WT:EMicron Technology |
LPDDR4 64G 1GX64 FBGA WT 8DP |
|
70261S35PFI8Renesas Electronics America |
IC SRAM 256KBIT PARALLEL 100TQFP |