类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Dual Port, Asynchronous |
内存大小: | 32Kb (4K x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 70ns |
访问时间: | 70 ns |
电压 - 电源: | 4.5V ~ 5.5V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 52-LCC (J-Lead) |
供应商设备包: | 52-PLCC (19.13x19.13) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MT53D4DCFL-DCMicron Technology |
LPDDR4 FBGA QDP |
|
M27C512-45C1STMicroelectronics |
IC EPROM 512KBIT PARALLEL 32PLCC |
|
MT29F384G08EBHBBB0KB3WC1-RMicron Technology |
IC FLASH 384GBIT PARALLEL WAFER |
|
MT48H16M32LFB5-6 AAT:C TRMicron Technology |
IC DRAM 512MBIT PARALLEL 90VFBGA |
|
MT53B1536M32D8QD-053 WT:DMicron Technology |
IC DRAM 6GBIT 1866MHZ FBGA |
|
70V05S55J8Renesas Electronics America |
IC SRAM 64KBIT PARALLEL 68PLCC |
|
IS64WV102416EDBLL-12B4A3ISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 16MBIT PARALLEL 48TFBGA |
|
MT47H64M16HR-25E AIT:H TRMicron Technology |
IC DRAM 1GBIT PARALLEL 84FBGA |
|
7006S55JIRenesas Electronics America |
IC SRAM 128KBIT PARALLEL 68PLCC |
|
MT41K256M16V00HWC1-N001Micron Technology |
DDR3 4G DIE 256MX16 |
|
MT29FEN64GDKCAAXDQ-10:A TRMicron Technology |
IC MEMORY |
|
W978H2KBQX2EWinbond Electronics Corporation |
IC DRAM 256MBIT PAR 168WFBGA |
|
MT44K32M36RB-107E IT:AMicron Technology |
IC RLDRAM 1.125GBIT PAR 168BGA |