English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Dual Port, Asynchronous |
| 内存大小: | 128Kb (16K x 8) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 55ns |
| 访问时间: | 55 ns |
| 电压 - 电源: | 4.5V ~ 5.5V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 68-LCC (J-Lead) |
| 供应商设备包: | 68-PLCC (24.21x24.21) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
MT41K256M16V00HWC1-N001Micron Technology |
DDR3 4G DIE 256MX16 |
|
|
MT29FEN64GDKCAAXDQ-10:A TRMicron Technology |
IC MEMORY |
|
|
W978H2KBQX2EWinbond Electronics Corporation |
IC DRAM 256MBIT PAR 168WFBGA |
|
|
MT44K32M36RB-107E IT:AMicron Technology |
IC RLDRAM 1.125GBIT PAR 168BGA |
|
|
MT53B512M32D2NP-053 WT:CMicron Technology |
IC DRAM 16GBIT 1866MHZ 200WFBGA |
|
|
MT49H16M36BM-25E:BMicron Technology |
IC DRAM 576MBIT PARALLEL 144UBGA |
|
|
MT53B384M64D4EZ-062 WT ES:BMicron Technology |
IC DRAM 24GBIT 1600MHZ FBGA |
|
|
CG7499AATCypress Semiconductor |
IC SRAM NON VOLATILE 48FBGA |
|
|
70V06S45JRenesas Electronics America |
IC SRAM 128KBIT PARALLEL 68PLCC |
|
|
24AA16/W15KRoving Networks / Microchip Technology |
IC EEPROM 16KBIT I2C 400KHZ DIE |
|
|
MT41K512M8V00HWC1-N002Micron Technology |
IC DRAM 4GBIT PARALLEL |
|
|
M29F800FB55M3E2Micron Technology |
IC FLASH 8MBIT PARALLEL 44SO |
|
|
S99-50292-TCypress Semiconductor |
IC FLASH |
