类型 | 描述 |
---|---|
系列: | SST213 |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 10 V |
电流 - 连续漏极 (id) @ 25°c: | 50mA (Ta) |
驱动电压(最大 rds on,最小 rds on): | 5V, 25V |
rds on (max) @ id, vgs: | 50Ohm @ 1mA, 10V |
vgs(th) (最大值) @ id: | 1.5V @ 1µA |
栅极电荷 (qg) (max) @ vgs: | - |
vgs (最大值): | +25V, -15V |
输入电容 (ciss) (max) @ vds: | - |
场效应管特征: | - |
功耗(最大值): | 300mW (Ta) |
工作温度: | -55°C ~ 125°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | SOT-143-4 |
包/箱: | TO-253-4, TO-253AA |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IXTA90N055T2Wickmann / Littelfuse |
MOSFET N-CH 55V 90A TO263 |
|
IRFS3107TRLPBFIR (Infineon Technologies) |
MOSFET N-CH 75V 195A D2PAK |
|
STB34NM60NDSTMicroelectronics |
MOSFET N-CH 600V 29A D2PAK |
|
NTE2382NTE Electronics, Inc. |
MOSFET N-CHANNEL 100V 9.2A TO220 |
|
SI2316BDS-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 4.5A SOT23-3 |
|
NTJS4160NT1GRochester Electronics |
MOSFET N-CH 30V 1.8A SC88/SC70-6 |
|
IRF142Rochester Electronics |
25A, 100V, 0.1OHM, N-CHANNEL POW |
|
STL8NH3LLSTMicroelectronics |
MOSFET N-CH 30V 8A POWERFLAT |
|
IPB200N15N3Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
TSM085P03CV RGGTSC (Taiwan Semiconductor) |
MOSFET P-CH 30V 64A 8PDFN |
|
IRFZ44NLPBFIR (Infineon Technologies) |
MOSFET N-CH 55V 49A TO262 |
|
FDD3570Rochester Electronics |
MOSFET N-CH 80V 10A TO252 |
|
NTLJS5D0N03CTAGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 11.2A 6PQFN |