English
简体中文
LCD OLED GRAPHIC 128 X 32 YLW
MOSFET N-CH 75V 195A D2PAK
CABLE BANTAM PHONE PLUGS 72"
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | HEXFET® |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 75 V |
| 电流 - 连续漏极 (id) @ 25°c: | 195A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 3mOhm @ 140A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 240 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 9370 pF @ 50 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 370W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | D2PAK |
| 包/箱: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
STB34NM60NDSTMicroelectronics |
MOSFET N-CH 600V 29A D2PAK |
|
NTE2382NTE Electronics, Inc. |
MOSFET N-CHANNEL 100V 9.2A TO220 |
|
SI2316BDS-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 4.5A SOT23-3 |
|
NTJS4160NT1GRochester Electronics |
MOSFET N-CH 30V 1.8A SC88/SC70-6 |
|
IRF142Rochester Electronics |
25A, 100V, 0.1OHM, N-CHANNEL POW |
|
STL8NH3LLSTMicroelectronics |
MOSFET N-CH 30V 8A POWERFLAT |
|
IPB200N15N3Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
TSM085P03CV RGGTSC (Taiwan Semiconductor) |
MOSFET P-CH 30V 64A 8PDFN |
|
IRFZ44NLPBFIR (Infineon Technologies) |
MOSFET N-CH 55V 49A TO262 |
|
FDD3570Rochester Electronics |
MOSFET N-CH 80V 10A TO252 |
|
NTLJS5D0N03CTAGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 11.2A 6PQFN |
|
RSD080N06TLROHM Semiconductor |
MOSFET N-CH 60V 8A CPT3 |
|
IXFK300N20X3Wickmann / Littelfuse |
MOSFET N-CH 200V 300A TO264 |