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| 类型 | 描述 |
|---|---|
| 系列: | * |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 类型: | - |
| 单向通道: | - |
| 双向通道: | - |
| 电压 - 反向间隔（典型值）: | - |
| 电压 - 击穿（分钟）: | - |
| 电压 - 钳位（最大值）@ ipp: | - |
| 电流 - 峰值脉冲 (10/1000µs): | - |
| 功率-峰值脉冲: | - |
| 电源线保护: | - |
| 应用: | - |
| 电容@频率: | - |
| 工作温度: | - |
| 安装类型: | - |
| 包/箱: | - |
| 供应商设备包: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
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SMCG6056E3/TR13Microsemi |
TVS DIODE 41V 73.5V DO215AB |
|
|
5KP220CE3/TR13Roving Networks / Microchip Technology |
TVS DIODE 220V 410V P600 |
|
|
5KP90E3/TR13Roving Networks / Microchip Technology |
TVS DIODE 90V 160V P600 |
|
|
MXSMLG20ARoving Networks / Microchip Technology |
TVS DIODE 20V 32.4V DO215AB |
|
|
MXLSMCJ13CA/TRRoving Networks / Microchip Technology |
HI REL TVS |
|
|
JAN1N6117AUSRoving Networks / Microchip Technology |
TVS DIODE 22.8V 41.6V B SQ-MELF |
|
|
MAP6KE39AE3Roving Networks / Microchip Technology |
TVS DIODE 33.3V 53.9V T-18 |
|
|
SMCJ11CAHE3_A/HVishay General Semiconductor – Diodes Division |
TVS DIODE DO214AB |
|
|
MXLPLAD6.5KP36CARoving Networks / Microchip Technology |
TVS DIODE 36V 58.1V PLAD |
|
|
MP6KE47AE3Roving Networks / Microchip Technology |
TVS DIODE 40.2V 64.8V T-18 |
|
|
MASMCG85AE3Roving Networks / Microchip Technology |
TVS DIODE 85V 137V DO215AB |
|
|
1N5660ARoving Networks / Microchip Technology |
TVS DIODE 111V 179V DO13 |
|
|
MP6KE16ARoving Networks / Microchip Technology |
TVS DIODE 13.6V 22.5V T-18 |
