类型 | 描述 |
---|---|
系列: | Automotive, AEC-Q101 |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | 2 N-Channel (Dual) |
场效应管特征: | Standard |
漏源电压 (vdss): | 60V |
电流 - 连续漏极 (id) @ 25°c: | 6A (Ta), 30A (Tc) |
rds on (max) @ id, vgs: | 25mOhm @ 6A, 10V |
vgs(th) (最大值) @ id: | 3.8V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 24nC @ 10V |
输入电容 (ciss) (max) @ vds: | 1398pF @ 30V |
功率 - 最大值: | 2.5W (Ta), 58W (Tc) |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Surface Mount, Wettable Flank |
包/箱: | 8-PowerTDFN |
供应商设备包: | 8-PDFNU (5x6) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
SLA5074Sanken Electric Co., Ltd. |
MOSFET 4N-CH 60V 5A 15-SIP |
|
SI5902BDC-T1-E3Vishay / Siliconix |
MOSFET 2N-CH 30V 4A 1206-8 |
|
FDMS3668SSanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 30V 13A/18A POWER56 |
|
FDPC8012SSanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 25V 13A/26A PWR CLP |
|
EM6M2T2RROHM Semiconductor |
MOSFET N/P-CH 20V 0.2A EMT6 |
|
EPC2102ENGRTEPC |
GANFET 2 N-CHANNEL 60V 23A DIE |
|
SI1967DH-T1-GE3Vishay / Siliconix |
MOSFET 2P-CH 20V 1.3A SC70-6 |
|
BSG0813NDIATMA1IR (Infineon Technologies) |
MOSFET 2N-CH 25V 19A/33A TISON8 |
|
TSM300NB06DCR RLGTSC (Taiwan Semiconductor) |
DUAL N-CHANNEL POWER MOSFET 60V, |
|
NTQD6866R2Rochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
RFD8P05SM9AS2463Rochester Electronics |
8A, 50V, 0.300 OHM, P-CHANNEL |
|
SI4599DY-T1-GE3Vishay / Siliconix |
MOSFET N/P-CH 40V 6.8A 8SOIC |
|
MSCSM120HM50CT3AGRoving Networks / Microchip Technology |
PM-MOSFET-SIC-SBD~-SP3F |