类型 | 描述 |
---|---|
系列: | * |
包裹: | Bulk |
零件状态: | Active |
场效应管类型: | - |
场效应管特征: | - |
漏源电压 (vdss): | - |
电流 - 连续漏极 (id) @ 25°c: | - |
rds on (max) @ id, vgs: | - |
vgs(th) (最大值) @ id: | - |
栅极电荷 (qg) (max) @ vgs: | - |
输入电容 (ciss) (max) @ vds: | - |
功率 - 最大值: | - |
工作温度: | - |
安装类型: | - |
包/箱: | - |
供应商设备包: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
DF23MR12W1M1PB11BPSA1IR (Infineon Technologies) |
MOSFET MODULE 1200V |
|
CSD86336Q3DTTexas Instruments |
SYNCHRONOUS BUCK NEXFET POWER BL |
|
TSM500P02DCQ RFGTSC (Taiwan Semiconductor) |
MOSFET 2 P-CH 20V 4.7A 6TDFN |
|
SI7980DP-T1-GE3Vishay / Siliconix |
MOSFET 2N-CH 20V 8A PPAK SO-8 |
|
TSM9926DCS RLGTSC (Taiwan Semiconductor) |
MOSFET 2 N-CHANNEL 20V 6A 8SOP |
|
DMN2005DLP4K-7Zetex Semiconductors (Diodes Inc.) |
MOSFET 2N-CH 20V 0.3A 6-DFN |
|
SQJQ906EL-T1_GE3Vishay / Siliconix |
MOSFET 2 N-CH 40V POWERPAK8X8 |
|
TSM250NB06LDCR RLGTSC (Taiwan Semiconductor) |
DUAL N-CHANNEL POWER MOSFET 60V, |
|
DF11MR12W1M1B11BOMA1Rochester Electronics |
IGBT MODULE |
|
MCH6605-TL-ERochester Electronics |
SMALL SIGNAL FET |
|
DMG9926USD-13Zetex Semiconductors (Diodes Inc.) |
MOSFET 2N-CH 20V 8A SOP8L |
|
TSM200N03DPQ33 RGGTSC (Taiwan Semiconductor) |
MOSFET 2 N-CH 30V 20A 8PDFN |
|
CSD85312Q3ETexas Instruments |
MOSFET 2N-CH 20V 39A 8VSON |