类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
场效应管类型: | N and P-Channel Complementary |
场效应管特征: | Standard |
漏源电压 (vdss): | 30V |
电流 - 连续漏极 (id) @ 25°c: | 800mA (Ta), 550mA (Ta) |
rds on (max) @ id, vgs: | 400mOhm @ 590mA, 10V, 900mOhm @ 420mA, 10V |
vgs(th) (最大值) @ id: | 1.6V @ 250µA, 2.6V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 1.2nC, 800pC @ 10V |
输入电容 (ciss) (max) @ vds: | 50pF, 19pF @ 15V |
功率 - 最大值: | 290mW (Ta) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
包/箱: | 6-TSSOP, SC-88, SOT-363 |
供应商设备包: | SOT-363 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
EPC2106EPC |
GANFET TRANS SYM 100V BUMPED DIE |
|
AON6946Alpha and Omega Semiconductor, Inc. |
MOSFET 2N-CH 30V 14A/18A 8DFN |
|
DMC2057UVT-13Zetex Semiconductors (Diodes Inc.) |
MOSFET BVDSS: 8V-24V TSOT26 T&R |
|
FC8V33030LPanasonic |
MOSFET 2N-CH 33V 6.5A WMINI8 |
|
AUIRF7309QTRIR (Infineon Technologies) |
MOSFET N/P-CH 30V 4A/3A 8SO |
|
SI4590DY-T1-GE3Vishay / Siliconix |
MOSFET N/P CHAN 100V SO8 DUAL |
|
DMC4029SSD-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N/P-CH 40V 7A/5.1A 8SO |
|
IPG20N06S4L14AATMA1IR (Infineon Technologies) |
MOSFET 2N-CH 60V 20A 8TDSON |
|
IPI60R190C6Rochester Electronics |
COOLMOS N-CHANNEL POWER MOSFET |
|
SQ4940AEY-T1_GE3Vishay / Siliconix |
MOSFET 2N-CH 40V 8A 8SOIC |
|
FDJ1028NRochester Electronics |
N-CHANNEL POWER MOSFET |
|
NTLGD3502NT2GSanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 20V 4.3A/3.6A 6DFN |
|
TQM110NB04DCR RLGTSC (Taiwan Semiconductor) |
40V, 50A, DUAL N-CHANNEL POWER M |