MOSFET 2N-CH 10.6V 8SOIC
IC COUNTER BINARY UP/DOWN 16SOIC
类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Active |
场效应管类型: | 2 N-Channel (Dual) Matched Pair |
场效应管特征: | Standard |
漏源电压 (vdss): | 10.6V |
电流 - 连续漏极 (id) @ 25°c: | 40mA |
rds on (max) @ id, vgs: | - |
vgs(th) (最大值) @ id: | - |
栅极电荷 (qg) (max) @ vgs: | - |
输入电容 (ciss) (max) @ vds: | - |
功率 - 最大值: | 500mW |
工作温度: | 0°C ~ 70°C (TJ) |
安装类型: | Surface Mount |
包/箱: | 8-SOIC (0.154", 3.90mm Width) |
供应商设备包: | 8-SOIC |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
AO7800Alpha and Omega Semiconductor, Inc. |
MOSFET 2N-CH 20V SC70-6 |
|
DMC4040SSD-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N/P-CH 40V 6.8A 8SO |
|
PMCXB1000UEZNexperia |
MOSFET N/P-CH 30V DFN1010B-6 |
|
RF1S23N06LERochester Electronics |
23A, 60V, 0.065OHM, N-CHANNEL, |
|
EFC4627R-TRRochester Electronics |
POWER FIELD-EFFECT TRANSISTOR |
|
IPG20N06S4L11ATMA2IR (Infineon Technologies) |
MOSFET_)40V 60V) |
|
DF23MR12W1M1B11BPSA1IR (Infineon Technologies) |
MOSFET MOD 1200V 25A |
|
FDG6304PSanyo Semiconductor/ON Semiconductor |
MOSFET 2P-CH 25V 0.41A SC70-6 |
|
SP8M4FRATBROHM Semiconductor |
4V DRIVE NCH+PCH MOSFET (CORRESP |
|
BSL214NL6327HTSA1Rochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
TSM110NB04LDCR RLGTSC (Taiwan Semiconductor) |
DUAL N-CHANNEL POWER MOSFET 40V, |
|
BSZ215CHXTMA1IR (Infineon Technologies) |
MOSFET N/P-CH 20V 8TSDSON |
|
CSD87503Q3ETTexas Instruments |
30-V DUAL N-CHANNEL MOSFET, COMM |