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MOSFET MOD 1200V 25A
BACKUP TERMINAL .130
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| 类型 | 描述 |
|---|---|
| 系列: | CoolSiC™+ |
| 包裹: | Tray |
| 零件状态: | Active |
| 场效应管类型: | 2 N-Channel (Dual) |
| 场效应管特征: | Silicon Carbide (SiC) |
| 漏源电压 (vdss): | 1200V |
| 电流 - 连续漏极 (id) @ 25°c: | 25A (Tj) |
| rds on (max) @ id, vgs: | 45mOhm @ 25A, 15V (Typ) |
| vgs(th) (最大值) @ id: | 5.55V @ 10mA |
| 栅极电荷 (qg) (max) @ vgs: | 62nC @ 15V |
| 输入电容 (ciss) (max) @ vds: | 1840pF @ 800V |
| 功率 - 最大值: | 20mW |
| 工作温度: | -40°C ~ 150°C (TJ) |
| 安装类型: | Chassis Mount |
| 包/箱: | Module |
| 供应商设备包: | AG-EASY1BM-2 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
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电话: 00852-52612101
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