English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | 2 N-Channel (Dual) |
| 场效应管特征: | Logic Level Gate, 2.5V Drive |
| 漏源电压 (vdss): | 60V |
| 电流 - 连续漏极 (id) @ 25°c: | 250mA |
| rds on (max) @ id, vgs: | 2.4Ohm @ 250mA, 10V |
| vgs(th) (最大值) @ id: | 2.3V @ 1mA |
| 栅极电荷 (qg) (max) @ vgs: | - |
| 输入电容 (ciss) (max) @ vds: | 15pF @ 25V |
| 功率 - 最大值: | 150mW |
| 工作温度: | 150°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | 6-TSSOP, SC-88, SOT-363 |
| 供应商设备包: | UMT6 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IPB080N03LGRochester Electronics |
OPTLMOS N-CHANNEL POWER MOSFET |
|
IRF7507TRPBFIR (Infineon Technologies) |
MOSFET N/P-CH 20V 1.7A MICRO8 |
|
SIB912DK-T1-GE3Vishay / Siliconix |
MOSFET 2N-CH 20V 1.5A SC-75-6 |
|
SSM6L35FU(TE85L,F)Toshiba Electronic Devices and Storage Corporation |
MOSFET N/P-CH 20V 0.18A/0.1A US6 |
|
NTLJD2104PTAGRochester Electronics |
SMALL SIGNAL P-CHANNEL MOSFET |
|
CSD86330Q3DTexas Instruments |
MOSFET 2N-CH 25V 20A 8LSON |
|
FC6546010RPanasonic |
MOSFET 2N-CH 60V 0.1A SMINI6-F3 |
|
HTMN5130SSD-13Zetex Semiconductors (Diodes Inc.) |
MOSFET 2N-CH 55V 2.6A 8SOIC |
|
IPG20N10S4L22AATMA1IR (Infineon Technologies) |
MOSFET 2N-CH 100V 20A TDSON-8 |
|
SI4228DY-T1-GE3Vishay / Siliconix |
MOSFET 2N-CH 25V 8A 8-SOIC |
|
SQ4946AEY-T1_BE3Vishay / Siliconix |
MOSFET 2N-CH 60V 7A |
|
FDG6317NZSanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 20V 0.7A SC70-6 |
|
DMC25D1UVT-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N/P-CH 25V/12V TSOT26 |
