类型 | 描述 |
---|---|
系列: | Automotive, AEC-Q101, TrenchMOS™ |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | 2 N-Channel (Dual) |
场效应管特征: | Logic Level Gate |
漏源电压 (vdss): | 30V |
电流 - 连续漏极 (id) @ 25°c: | 40A |
rds on (max) @ id, vgs: | 5.1mOhm @ 10A, 10V |
vgs(th) (最大值) @ id: | 4V @ 1mA |
栅极电荷 (qg) (max) @ vgs: | 31.1nC @ 10V |
输入电容 (ciss) (max) @ vds: | 2352pF @ 25V |
功率 - 最大值: | 68W |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Surface Mount |
包/箱: | SOT-1205, 8-LFPAK56 |
供应商设备包: | LFPAK56D |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
NVJD5121NT1GSanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 60V 0.295A SC88 |
|
RM3075S8(N)Rectron USA |
MOSFET N&P-CH 30V 6.8A/4.6A 8SOP |
|
SPU03N60C3Rochester Electronics |
POWER FIELD-EFFECT TRANSISTOR, 3 |
|
NTMD6N03R2Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
IPB65R280E6Rochester Electronics |
OPTLMOS N-CHANNEL POWER MOSFET |
|
QS8K11TCRROHM Semiconductor |
4V DRIVE NCH+NCH MOSFET |
|
PMDPB95XNE,115Rochester Electronics |
SMALL SIGNAL MOSFET |
|
TSM6502CR RLGTSC (Taiwan Semiconductor) |
MOSFET N/P-CH 60V 24A/18A 8PDFN |
|
NVMFD5C650NLT1GSanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 60V 111A S08FL |
|
BUK7K32-100EXNexperia |
MOSFET 2N-CH 100V 29A LFPAK56D |
|
ALD212900SALAdvanced Linear Devices, Inc. |
MOSFET 2N-CH 10.6V 0.08A 8SOIC |
|
MCH6660-TL-HRochester Electronics |
SMALL SIGNAL FET |
|
ALD110908SALAdvanced Linear Devices, Inc. |
MOSFET 2N-CH 10.6V 8SOIC |