FAN AXIAL 120X25.5MM 12VDC WIRE
BUFFER/INVERTER BASED MOSFET DRI
TERM BLK 2P SIDE ENTRY 10MM PCB
类型 | 描述 |
---|---|
系列: | * |
包裹: | Bulk |
零件状态: | Active |
场效应管类型: | - |
场效应管特征: | - |
漏源电压 (vdss): | - |
电流 - 连续漏极 (id) @ 25°c: | - |
rds on (max) @ id, vgs: | - |
vgs(th) (最大值) @ id: | - |
栅极电荷 (qg) (max) @ vgs: | - |
输入电容 (ciss) (max) @ vds: | - |
功率 - 最大值: | - |
工作温度: | - |
安装类型: | - |
包/箱: | - |
供应商设备包: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IRF7509TRPBFIR (Infineon Technologies) |
MOSFET N/P-CH 30V 2.7A/2A MICRO8 |
|
SI7913DN-T1-E3Vishay / Siliconix |
MOSFET 2P-CH 20V 5A 1212-8 |
|
SQJ968EP-T1_GE3Vishay / Siliconix |
MOSFET 2 N-CH 60V POWERPAK SO8 |
|
NTLUD3A260PZTAGSanyo Semiconductor/ON Semiconductor |
MOSFET 2P-CH 20V 1.3A 6UDFN |
|
MPIC2117PRochester Electronics |
BUFFER/INVERTER BASED MOSFET DRI |
|
ALD210804PCLAdvanced Linear Devices, Inc. |
MOSFET 4N-CH 10.6V 0.08A 16DIP |
|
SI7236DP-T1-GE3Vishay / Siliconix |
MOSFET 2N-CH 20V 60A PPAK SO-8 |
|
FDMB2307NZSanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 6MLP |
|
IRLHS6276TRPBFIR (Infineon Technologies) |
MOSFET 2N-CH 20V 4.5A PQFN |
|
SH8J31GZETBROHM Semiconductor |
60V PCH+PCH MIDDLE POWER MOSFET |
|
ALD212914SALAdvanced Linear Devices, Inc. |
MOSFET 2N-CH 10.6V 0.08A 8SOIC |
|
NTMFD5C470NLT1GSanyo Semiconductor/ON Semiconductor |
T6 40V LL S08FL DS |
|
CMLDM7484 TR PBFREECentral Semiconductor |
MOSFET N/P-CH 30V 0.45A SOT-563 |